O'Connor, Eamon and Brennan, B and Djara, Vladimir and Cherkaoui, Karim and Monaghan, Scott and Newcomb, Simon B and Contreras, R and Milojevic, M and Hughes, Gregory and Pemble, Martyn E and others
A systematic study of (NH 4) 2 S passivation (22\%, 10\%, 5\%, or 1\%) on the interface properties of the Al 2 O 3/In 0.53 Ga 0.47 As/InP system for n-type and p-type In 0.53 Ga 0.47 As epitaxial layers